Optoelectronic chromatic dispersion and wavelength monitoring in a photodiode

ZIV GLASSER, PAWAN KUMAR DUBEY, AYUUSHI DUTTA, EGOR LIOKUMOVITCH, RITA ABRAMOV, SHMUEL STERNKLAR

نتاج البحث: نشر في مجلةمقالةمراجعة النظراء

ملخص

The optoelectronic process of light absorption and current formation in photodiodes is shown to be a significant source of optoelectronic chromatic dispersion (OED). Simple design rules are developed for fabricating a photodiode-based dispersion device that possesses large, small, zero, and either positive or negative OED. The OED parameter is proportional to a spectrally-dependent absorption term α-1dα/dλ . Silicon-based devices are predicted to display significant OED throughout the near IR, while Ge and InGaAs have high OED in the C- and L-bands and 1650 nm region, respectively. The OED of a commercial Ge PN photodiode is measured to be 3460 ps/nm at 1560 nm wavelength with 500 kHz modulation, demonstrating 8 pm spectral resolution with the phase-shift technique. Temperature-tuning of the OED in the Ge photodiode is also demonstrated. The ubiquitous photodiode is a tunable OED device, with applications in high-resolution optical spectroscopy and optical sensing.

اللغة الأصليةالإنجليزيّة
الصفحات (من إلى)19839-19852
عدد الصفحات14
دوريةOptics Express
مستوى الصوت29
رقم الإصدار13
المعرِّفات الرقمية للأشياء
حالة النشرنُشِر - 21 يونيو 2021

All Science Journal Classification (ASJC) codes

  • !!Atomic and Molecular Physics, and Optics

بصمة

أدرس بدقة موضوعات البحث “Optoelectronic chromatic dispersion and wavelength monitoring in a photodiode'. فهما يشكلان معًا بصمة فريدة.

قم بذكر هذا