Integrated circuit reliability prediction based on physics-of-failure models in conjunction with field study

Avshalom Hava, Jin Qin, Joseph B. Bernstein, Yizhak Bot

نتاج البحث: فصل من :كتاب / تقرير / مؤتمرمنشور من مؤتمرمراجعة النظراء

ملخص

Microelectronics device reliability has been improving with every generation of technology whereas the density of the circuits continues to double approximately every 18 months. We studied field data gathered from a large fleet of mobile communications products that were deployed over a period of 8 years in order to examine the reliability trend in the field. We extrapolated the expected failure rate for a series of microprocessors and found a significant trend whereby the circuit failure rate increases approximately half the rate of the technology, going up by approximately √2 in that same 18 month period.

اللغة الأصليةالإنجليزيّة
عنوان منشور المضيف59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Proceedings and Tutorials
المعرِّفات الرقمية للأشياء
حالة النشرنُشِر - 2013
الحدث59th Annual Reliability and Maintainability Symposium, RAMS 2013 - Orlando, FL, الولايات المتّحدة
المدة: ٢٨ يناير ٢٠١٣٣١ يناير ٢٠١٣

سلسلة المنشورات

الاسمProceedings - Annual Reliability and Maintainability Symposium

!!Conference

!!Conference59th Annual Reliability and Maintainability Symposium, RAMS 2013
الدولة/الإقليمالولايات المتّحدة
المدينةOrlando, FL
المدة٢٨/٠١/١٣٣١/٠١/١٣

All Science Journal Classification (ASJC) codes

  • !!Safety, Risk, Reliability and Quality
  • !!Mathematics (all)
  • !!Computer Science Applications

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