Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy

Muhammad Y. Bashouti, Kasra Sardashti, Juergen Ristein, Silke H. Christiansen

نتاج البحث: نشر في مجلةمقالةمراجعة النظراء

ملخص

Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200°C). At high temperatures (T ≥ 200°C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices. This journal is

اللغة الأصليةإنجليزيّة أمريكيّة
الصفحات (من إلى)11877-11881
عدد الصفحات5
دوريةPhysical Chemistry Chemical Physics
مستوى الصوت14
رقم الإصدار34
المعرِّفات الرقمية للأشياء
حالة النشرنُشِر - 14 سبتمبر 2012
منشور خارجيًانعم

All Science Journal Classification (ASJC) codes

  • !!General Physics and Astronomy
  • !!Physical and Theoretical Chemistry

بصمة

أدرس بدقة موضوعات البحث “Early stages of oxide growth in H-terminated silicon nanowires: Determination of kinetic behavior and activation energy'. فهما يشكلان معًا بصمة فريدة.

قم بذكر هذا